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Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N TRANSISTOR
HP50
APPLICATIONS
High Voltage And switching. ABSOLUTE MAXIMUM RATINGS a=25ae(c) T
T stg Storage Temperature---------- 65~150ae T j Junction Temperature-----------150ae PCCollector Dissipation c=25ae T (c)-------40W VCBO Collector-Base Voltage--------500V VCEO Collector-Emitter Voltage--------400V VEBO Emitter-Base Voltage-----------5V ICCollector Current (c) DC ----------1A ICCollector Current Pulse(c)------- 2A ---IB Base Current---------------0.6A TO-220
1D Base B
2D Collector C 3D Emitter, E
ELECTRICAL CHARACTERISTICS a=25ae(c) T
Symbol Characteristics Min Typ Max Unit Test Conditions
BVCEO ICEO IEBO ICES HFE 2(c) HFE VCE(sat) VBE(on) fT R|E JC R|E JA
Collector-Emitter Breakdown Voltage Collector Cut-off Current
Emitter-Base Cutoff Current
400 1
1
V
IC=30mA, IB=0
mA VCE=300V, IB=0 m A VEB=5V, IC=0 mA VCE=500V, VEB=0 VCE=10V, IC=0.3A VCE=10V, IC=1A VCE=10V, IC=0.2A,f=1MHz IC=1A, IB =0.2A VCE=10V, IC=1A
Collector Cut-off Current 22 10 20 Collector- Emitter Saturation Voltage Base-Emitter On Voltage Current Gain-Bandwidth Product 10
1 150
HFE 1(c) DC Current Gain
1 1.5 3.125 62.5
V V
MHz VCE=10V,IC=0.1A,f=2MHz ae /W ae /W
Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N TRANSISTOR
HP50
Figure 1 Power derating
Figure 2 Switching Time Equivalent Circuit
Figure 3 Turn-On Time
Figure 4 4Active Region Safe Operating Area
5 Thermal Response Figure 5
Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N TRANSISTOR
HP50
Figure 6 Turn-Off Time
Figure 7 Temperature Coefficients
Figure 8 Inductive Load Switching
Figure 9 Current Gain DC
Figure 10 On Voltages

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